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Title: Design of DC-contact RF MEMS switch with temperature stability

In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100 °C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C for 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ; ;  [3] ;  [2] ;  [3]
  1. Institute of RF- and OE- ICs, Southeast University, Nanjing, 210096 (China)
  2. (China)
  3. Nanjing Electronic Devices Institute, Nanjing, 210016 (China)
Publication Date:
OSTI Identifier:
22488516
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ELECTRIC POTENTIAL; MEMS; STABILITY; STRESSES