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Title: Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition

Ultrathin-barrier AlN/GaN heterostructures were grown on sapphire substrates by pulsed metal organic chemical vapor deposition (PMOCVD) using indium as a surfactant at a dramatically reduced growth temperature of 830 °C. Upon optimization of growth parameters, an electron mobility of 1398 cm{sup 2}/V s together with a two-dimensional-electron-gas density of 1.3 × 10{sup 13 }cm{sup −2} was obtained for a 4 nm thick AlN barrier. The grown structures featured well-ordered parallel atomic steps with a root-mean-square roughness of 0.15 nm in a 5 × 5 μm{sup 2} area revealed by atomic-force-microscopic image. Finally, the potential of such structures for device application was demonstrated by fabricating and testing under dc operation AlN/GaN high-electron-mobility transistors. These results indicate that this low temperature PMOCVD growth technique is promising for the fabrication of GaN-based electronic devices.
Authors:
; ;  [1]
  1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)
Publication Date:
OSTI Identifier:
22486394
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; FABRICATION; GALLIUM NITRIDES; INDIUM; ORGANOMETALLIC COMPOUNDS; PULSES; ROUGHNESS; SAPPHIRE; SUBSTRATES; SURFACTANTS; TESTING; TRANSISTORS; TWO-DIMENSIONAL SYSTEMS