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Title: Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide

Abstract

The process of energy transfer (ET) between optically active ions has been widely studied to improve the optical efficiency of a system for different applications, from lighting and photovoltaics to silicon microphotonics. In this work, we report the influence of Bi on the Er optical emission in erbium-yttrium oxide thin films synthesized by magnetron co-sputtering. We demonstrate that this host permits to well dissolve Er and Bi ions, avoiding their clustering, and thus to stabilize the optically active Er{sup 3+} and Bi{sup 3+} valence states. In addition, we establish the ET occurrence from Bi{sup 3+} to Er{sup 3+} by the observed Bi{sup 3+} PL emission decrease and the simultaneous Er{sup 3+} photoluminescence (PL) emission increase. This was further confirmed by the coincidence of the Er{sup 3+} and Bi{sup 3+} excitation bands, analyzed by PL excitation spectroscopy. By increasing the Bi content of two orders of magnitude inside the host, though the occurrence of Bi-Bi interactions becomes deleterious for Bi{sup 3+} optical efficiency, the ET process between Bi{sup 3+} and Er{sup 3+} is still prevalent. We estimate ET efficiency of 70% for the optimized Bi:Er ratio equal to 1:3. Moreover, we have demonstrated to enhance the Er{sup 3+} effective excitation crossmore » section by more than three orders of magnitude with respect to the direct one, estimating a value of 5.3 × 10{sup −18} cm{sup 2}, similar to the expected Bi{sup 3+} excitation cross section. This value is one of the highest obtained for Er in Si compatible hosts. These results make this material very promising as an efficient emitter for Si-compatible photonics devices.« less

Authors:
 [1];  [2]; ;  [1];  [1]
  1. CNR IMM-MATIS, Via S. Sofia 64, 95123 Catania (Italy)
  2. Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy)
Publication Date:
OSTI Identifier:
22486378
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH; BISMUTH IONS; CROSS SECTIONS; EFFICIENCY; ERBIUM IONS; EXCITATION; MAGNETRONS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECT; SPECTROSCOPY; SPUTTERING; THIN FILMS; VALENCE; YTTRIUM OXIDES

Citation Formats

Scarangella, Adriana, Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Reitano, Riccardo, Franzò, Giorgia, Miritello, Maria, Priolo, Francesco, Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, and Scuola Superiore di Catania, Università di Catania, Via Valdisavoia 9, 95123 Catania. Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide. United States: N. p., 2015. Web. doi:10.1063/1.4927833.
Scarangella, Adriana, Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Reitano, Riccardo, Franzò, Giorgia, Miritello, Maria, Priolo, Francesco, Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, & Scuola Superiore di Catania, Università di Catania, Via Valdisavoia 9, 95123 Catania. Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide. United States. https://doi.org/10.1063/1.4927833
Scarangella, Adriana, Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Reitano, Riccardo, Franzò, Giorgia, Miritello, Maria, Priolo, Francesco, Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, and Scuola Superiore di Catania, Università di Catania, Via Valdisavoia 9, 95123 Catania. 2015. "Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide". United States. https://doi.org/10.1063/1.4927833.
@article{osti_22486378,
title = {Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide},
author = {Scarangella, Adriana and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania and Reitano, Riccardo and Franzò, Giorgia and Miritello, Maria and Priolo, Francesco and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania and Scuola Superiore di Catania, Università di Catania, Via Valdisavoia 9, 95123 Catania},
abstractNote = {The process of energy transfer (ET) between optically active ions has been widely studied to improve the optical efficiency of a system for different applications, from lighting and photovoltaics to silicon microphotonics. In this work, we report the influence of Bi on the Er optical emission in erbium-yttrium oxide thin films synthesized by magnetron co-sputtering. We demonstrate that this host permits to well dissolve Er and Bi ions, avoiding their clustering, and thus to stabilize the optically active Er{sup 3+} and Bi{sup 3+} valence states. In addition, we establish the ET occurrence from Bi{sup 3+} to Er{sup 3+} by the observed Bi{sup 3+} PL emission decrease and the simultaneous Er{sup 3+} photoluminescence (PL) emission increase. This was further confirmed by the coincidence of the Er{sup 3+} and Bi{sup 3+} excitation bands, analyzed by PL excitation spectroscopy. By increasing the Bi content of two orders of magnitude inside the host, though the occurrence of Bi-Bi interactions becomes deleterious for Bi{sup 3+} optical efficiency, the ET process between Bi{sup 3+} and Er{sup 3+} is still prevalent. We estimate ET efficiency of 70% for the optimized Bi:Er ratio equal to 1:3. Moreover, we have demonstrated to enhance the Er{sup 3+} effective excitation cross section by more than three orders of magnitude with respect to the direct one, estimating a value of 5.3 × 10{sup −18} cm{sup 2}, similar to the expected Bi{sup 3+} excitation cross section. This value is one of the highest obtained for Er in Si compatible hosts. These results make this material very promising as an efficient emitter for Si-compatible photonics devices.},
doi = {10.1063/1.4927833},
url = {https://www.osti.gov/biblio/22486378}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 107,
place = {United States},
year = {Mon Jul 27 00:00:00 EDT 2015},
month = {Mon Jul 27 00:00:00 EDT 2015}
}