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Title: Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.
Authors:
; ; ; ; ; ; ;  [1]
  1. Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22486363
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPOSITION; GALLIUM ARSENIDES; INDIUM ARSENIDES; PEAKS; PHOTOLUMINESCENCE; SEGREGATION; SUBSTRATES; WAVELENGTHS