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Title: Fully transparent organic transistors with junction-free metallic network electrodes

We utilize highly transparent, junction-free metal network electrodes to fabricate fully transparent organic field effect transistors (OFETs). The patterned transparent Ag networks are developed by polymer crack template with adjustable line width and density. Sheet resistance of the network is 6.8 Ω/sq and optical transparency in the whole visible range is higher than 80%. The bottom contact OFETs with DNTT active layer and parylene-C dielectric insulator show a maximum field-effect mobility of 0.13 cm{sup 2}/V s (average mobility is 0.12 cm{sup 2}/V s) and on/off ratio is higher than 10{sup 7}. The current OFETs show great potential for applications in the next generation of transparent and flexible electronics.
Authors:
; ; ; ; ;  [1]
  1. Laboratory of Nanoscale Energy Conversion Devices and Physics, Department of Mechanical Engineering, The University of Hong Kong, Pokfulam (Hong Kong)
Publication Date:
OSTI Identifier:
22486358
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRACKS; DENSITY; DIELECTRIC MATERIALS; ELECTRODES; FIELD EFFECT TRANSISTORS; LINE WIDTHS; METALS; MOBILITY