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Title: Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.
Authors:
; ; ; ; ;  [1] ; ;  [2] ; ; ;  [3] ; ;  [4]
  1. Division of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul 143-701 (Korea, Republic of)
  2. School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
  3. Department of Nano Applied Engineering, Kangwon National University, Kangwon-do 200-701 (Korea, Republic of)
  4. Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22486354
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON NANOTUBES; ELECTRICAL PROPERTIES; ELECTRODES; EQUIPMENT; FABRICATION; GRAPHENE; LAYERS; PERFORMANCE; RELIABILITY; SCHOTTKY BARRIER DIODES; TRANSISTORS