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Title: Origin of the broad three-terminal Hanle signals in Fe/SiO{sub 2}/Si tunnel junctions

Lorentzian-shaped broader three-terminal Hanle (B-3TH) signals are observed in Fe/SiO{sub 2}/Si tunnel junction devices at 6–300 K. We propose a spin conducting model, which explains all the characteristics of our experimental results, such as field angle dependence and bias dependence of the B-3TH signals, as well as experimental results reported by other groups. It was found that the shape of the B-3TH signals is determined by the spin depolarization at the Fe/SiO{sub 2} interface caused by local magnetic fields, unlike the conventional understanding. The shape of the B-3TH signals, including narrower and inverted Hanle signals, reflects the magnetic order of an ultrathin paramagnetic layer formed at the Fe/SiO{sub 2} interface. Our model provides a unified explanation of the B-3TH signals observed in three-terminal Hanle measurements.
Authors:
;  [1] ;  [1] ;  [2]
  1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22486346
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPOLARIZATION; EQUIPMENT; INTERFACES; LAYERS; MAGNETIC FIELDS; PARAMAGNETISM; SHAPE; SIGNALS; SILICON OXIDES; SPIN; TUNNEL EFFECT