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Title: Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

Perpendicularly magnetized flat thin films of antiperovskite Mn{sub 67}Ga{sub 24}N{sub 9} were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn{sub 70}Ga{sub 30} target. The films showed a saturation magnetization of 80 –100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1–0.2 MJ/m{sup 3}, and a Curie temperature of 660–740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn{sub 3}GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D0{sub 22}-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.
Authors:
; ; ;  [1] ; ; ;  [1] ;  [2]
  1. National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22486343
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; ANTIFERROMAGNETISM; ARGON; CURIE POINT; ELECTRIC CONTACTS; LAYERS; MAGNESIUM OXIDES; MAGNETIZATION; MIXTURES; NITROGEN; SPECTROSCOPY; SPIN ORIENTATION; SPUTTERING; STOICHIOMETRY; SUBSTRATES; THIN FILMS