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Title: Abnormal bipolar resistive switching behavior in a Pt/GaO{sub 1.3}/Pt structure

A stable and repeatable abnormal bipolar resistive switching behavior was observed in a Pt/GaO{sub 1.3}/Pt sandwich structure without an electroforming process. The low resistance state (LRS) and the high resistance state (HRS) of the device can be distinguished clearly and be switched reversibly under a train of the voltage pulses. The LRS exhibits a conduction of electron tunneling, while the HRS shows a conduction of Schottky-type. The observed phenomena are considered to be related to the migration of oxygen vacancies which changes the space charge region width of the metal/semiconductor interface and results in a different electron transport mechanism.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [3]
  1. Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China)
  2. (China)
  3. Department of Physics, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States)
Publication Date:
OSTI Identifier:
22486338
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; ELECTRODEPOSITION; ELECTRONS; GALLIUM OXIDES; INTERFACES; METALS; OXYGEN; PULSES; SEMICONDUCTOR MATERIALS; SPACE CHARGE; SWITCHES; TUNNEL EFFECT; VACANCIES