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Title: Evidence for an iron-hydrogen complex in p-type silicon

Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90–120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at E{sub v} + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10{sup −17} cm{sup 2}. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.
Authors:
; ; ;  [1] ;  [2]
  1. Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom)
  2. School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)
Publication Date:
OSTI Identifier:
22486337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABUNDANCE; ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; HYDROGEN COMPLEXES; IRON; SCHOTTKY BARRIER DIODES; SILICON; SILICON NITRIDES