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Title: Ultrafast terahertz modulation characteristic of tungsten doped vanadium dioxide nanogranular film revealed by time-resolved terahertz spectroscopy

The ultrafast terahertz (THz) modulation characteristic during photo-induced insulator-to-metal transition (IMT) of undoped and tungsten (W)-doped VO{sub 2} film was investigated at picoseconds time scale using time-resolved THz spectroscopy. W-doping slows down the photo-induced IMT dynamic processes (both the fast non-thermal process and the slow metallic phase propagation process) in VO{sub 2} film and also reduces the pump fluence threshold of photo-induced IMT in VO{sub 2} film. Along with the observed broadening of phase transition temperature window of IMT in W-doped VO{sub 2}, we conclude that W-doping prevents metallic phase domains from percolation. By further extracting carrier properties from photo-induced THz conductivity at several phase transition times, we found that the electron-electron correlation during IMT is enhanced in W-doped VO{sub 2}.
Authors:
 [1] ;  [2] ; ; ; ; ;  [3] ; ; ; ;  [1]
  1. College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065 (China)
  2. (China)
  3. National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics & Terahertz Research Center, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China)
Publication Date:
OSTI Identifier:
22486335
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; DOPED MATERIALS; ELECTRON CORRELATION; FILMS; MODULATION; NANOSTRUCTURES; PHASE TRANSFORMATIONS; SPECTROSCOPY; TIME RESOLUTION; TRANSITION TEMPERATURE; TUNGSTEN; VANADIUM OXIDES