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Title: Thermal transport across few-layer boron nitride encased by silica

Two dimensional hexagonal boron nitride (h-BN) attracted attention for use in applications. Using equilibrium molecular dynamics, we examine the phonon transport in few-layer h-BN encased by silica (SiO{sub 2}). We report large interfacial thermal resistances, of about 2.2 × 10{sup −8} m{sup 2} K W{sup −1}, which are not sensitive to the number of h-BN layers or the SiO{sub 2} crystallinity. The h-BN/SiO{sub 2} superlattices exhibit ultra-low thermal conductivities across layers, as low as 0.3 W/m K. They are structurally stable up to 2000 K while retaining the low-thermal conductivity attributes. Our simulations indicate that incorporation of h-BN layers and nanoparticles in silica could establish thermal barriers and heat spreading paths, useful for high performance coatings and electronic device applications.
Authors:
;  [1] ; ;  [2]
  1. Department of Mechanical Engineering, University of Minnesota, 111 Church Street SE, Minneapolis, Minnesota 55455 (United States)
  2. Department of Materials Science and Engineering, University of Texas at Arlington, 501 West First St., Arlington, Texas 76019 (United States)
Publication Date:
OSTI Identifier:
22486329
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON NITRIDES; ELECTRONIC EQUIPMENT; LAYERS; MOLECULAR DYNAMICS METHOD; NANOPARTICLES; PHONONS; SILICA; SILICON OXIDES; SUPERLATTICES; THERMAL CONDUCTIVITY; TWO-DIMENSIONAL SYSTEMS