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Title: One-dimensional edge state of Bi thin film grown on Si(111)

The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo, Kashiwa 5-1-5, Chiba 277-8561 (Japan)
  2. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Ibaraki 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22486328
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTALS; DEPOSITS; ELECTRONIC STRUCTURE; ENERGY DEPENDENCE; GEOMETRY; INTERFERENCE; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; SURFACES; THIN FILMS