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Title: Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaN layers.
Authors:
; ;  [1] ; ;  [2] ;  [2] ;  [3]
  1. Faculty of Fundamental Problems of Technology, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
  2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland)
  3. (Poland)
Publication Date:
OSTI Identifier:
22486306
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 26; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BOUNDARY CONDITIONS; BUFFERS; DISTRIBUTION; ELECTRIC FIELDS; FERMI LEVEL; GALLIUM NITRIDES; LAYERS; POISSON EQUATION; SPECTROSCOPY; SURFACES; THICKNESS; TWO-DIMENSIONAL SYSTEMS