Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939039· OSTI ID:22486304

Tsutsui, Kazuhiro; Matsubayashi, Daisuke; Ishihara, Noritaka; Takasu, Takako; Matsuda, Shinpei; Yamazaki, Shunpei ^[1]

---

1. Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi-shi 243-0036, Kanagawa (Japan)

The electron mobility of In-Ga-Zn-oxide (IGZO) is known to be enhanced by higher In content. We theoretically investigated the mobility-enhancement mechanism by proposing an In-Ga-Zn-disorder scattering model for an In-rich crystalline IGZO (In{sub 1+x}Ga{sub 1−x}O{sub 3}(ZnO){sub m} (0 < x < 1, m > 0)) thin film. The obtained theoretical mobility was found to be in agreement with experimental Hall mobility for a crystalline In{sub 1.5}Ga{sub 0.5}O{sub 3}(ZnO) (or In{sub 3}GaZn{sub 2}O{sub 8}) thin film. The mechanism specific to In-rich crystalline IGZO thin films is based on three types of Coulomb scattering potentials that originate from effective valence differences. In this study, the In-Ga-Zn-disorder scattering model indicates that the effective valence of the In{sup 3+} ions in In-rich crystalline IGZO thin films significantly affects their electron mobility.

• OSTI ID: 22486304
• Journal Information: Applied Physics Letters, Vol. 107, Issue 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COULOMB SCATTERING
ELECTRON MOBILITY
INDIUM IONS
POTENTIALS
THIN FILMS
VALENCE
ZINC OXIDES