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Title: A silicon-nanowire memory driven by optical gradient force induced bistability

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.
Authors:
 [1] ;  [2] ; ; ;  [3] ; ; ;  [1] ;  [1] ;  [2] ;  [4] ;  [5] ;  [1] ;  [4]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  2. (Agency for Science, Technology and Research), Singapore 117685 (Singapore)
  3. Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore)
  4. (China)
  5. School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22486299
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEFORMATION; NANOWIRES; QUANTUM COMPUTERS; RESONATORS; RINGS; SILICON; VISIBLE RADIATION