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Title: High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridge of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.
Authors:
;  [1] ; ; ;  [2] ;  [3]
  1. Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States)
  2. Physics and Applied Physics Department, University of Massachusetts Lowell, Lowell, Massachusetts 01854 (United States)
  3. Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 (United States)
Publication Date:
OSTI Identifier:
22486296
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DENSITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; QUANTUM EFFICIENCY; SILICON; SUBSTRATES; TEMPERATURE COEFFICIENT; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THRESHOLD CURRENT