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Title: GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.
Authors:
 [1] ;  [2] ; ; ;  [1] ; ; ;  [3]
  1. Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)
  2. (United Kingdom)
  3. Element-Six Technologies, Santa Clara, California 95054 (United States)
Publication Date:
OSTI Identifier:
22486266
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIAMONDS; ELECTRONIC EQUIPMENT; GALLIUM NITRIDES; HEAT TRANSFER; INTERFACES; MICROWAVE RADIATION; POTENTIALS; RELIABILITY; STRESSES