GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity
- Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)
- Element-Six Technologies, Santa Clara, California 95054 (United States)
The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.
- OSTI ID:
- 22486266
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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