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Title: Dislocation core structures in Si-doped GaN

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [1] ;  [4]
  1. Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
  2. Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)
  3. SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom)
  4. (United Kingdom)
  5. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)
Publication Date:
OSTI Identifier:
22486245
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; DAMAGE; DENSITY; DOPED MATERIALS; EDGE DISLOCATIONS; ELECTRON BEAMS; FILMS; GALLIUM NITRIDES; GEOMETRY; KEV RANGE 100-1000; TRANSMISSION ELECTRON MICROSCOPY