Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

Journal Article · Mon Dec 14 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4937442· OSTI ID:22486243

Tanta, R.; Krogstrup, P.; Nygård, J.; Madsen, M. H. ^[1]; Liao, Z.; Vosch, T. ^[2]

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1. Danish Fundamental Metrology, Matematiktorvet 307, Kgs. Lyngby 2800 (Denmark)
2. Nano-Science Center, Department of Chemistry, University of Copenhagen, Copenhagen 2100 (Denmark)

The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

• OSTI ID: 22486243
• Journal Information: Applied Physics Letters, Vol. 107, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COMPUTERIZED SIMULATION
DIFFRACTION
ELECTRICAL PROPERTIES
INDIUM
INDIUM ARSENIDES
LASER RADIATION
MAPPING
NANOWIRES
OXIDATION
RAMAN SPECTROSCOPY
SUBSTRATES