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Title: Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.
Authors:
; ; ;  [1] ;  [2] ; ;  [3]
  1. Center for Quantum Devices and Nano Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen 2100 (Denmark)
  2. Danish Fundamental Metrology, Matematiktorvet 307, Kgs. Lyngby 2800 (Denmark)
  3. Nano-Science Center, Department of Chemistry, University of Copenhagen, Copenhagen 2100 (Denmark)
Publication Date:
OSTI Identifier:
22486243
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPUTERIZED SIMULATION; DIFFRACTION; ELECTRICAL PROPERTIES; INDIUM; INDIUM ARSENIDES; LASER RADIATION; MAPPING; NANOWIRES; OXIDATION; RAMAN SPECTROSCOPY; SUBSTRATES