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Title: Transport properties and c/a ratio of V{sub 2}O{sub 3} thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition

We prepared V{sub 2}O{sub 3} thin films on C- or R-plane sapphire (Al{sub 2}O{sub 3}) substrates by a pulsed laser deposition method. X-ray diffraction analyses confirmed that single-phase V{sub 2}O{sub 3} films were epitaxially grown on both C- and R-planes under an Ar gas ambient of 2 × 10{sup −2} mbar at a substrate temperature of 873 K. Depending on the deposition conditions, c/a ratios at room temperature of (0001)-oriented V{sub 2}O{sub 3} films widely ranged from 2.79 to 2.88. Among them, the films of 2.81 ≤ c/a ≤ 2.84 showed complex metal (M)–insulator (I)–M transition during cooling from 300 to 10 K, while those of larger c/a ratios were accompanied by metallic properties throughout this temperature range. All the films on R-plane substrates underwent simple M-I transition at ∼150 K, which was more abrupt than the films on C-plane, whereas their c/a ratios were narrowly distributed. The distinct difference of M-I transition properties between C- and R-plane films is explained by the intrinsic a- and c-axes evolution through the transition from M to I phases.
Authors:
;  [1] ;  [2]
  1. GREMAN, UMR 7347 CNRS/Université François Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)
  2. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502 (Japan)
Publication Date:
OSTI Identifier:
22486230
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; ENERGY BEAM DEPOSITION; EPITAXY; LASER RADIATION; METALS; PULSED IRRADIATION; SAPPHIRE; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VANADIUM OXIDES; X-RAY DIFFRACTION