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Title: Charge sensing of a few-donor double quantum dot in silicon

We demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography. We show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions. We demonstrate that we can control the tunnel times of the second dot to the SET island by ∼4 orders of magnitude by detuning its energy with respect to the first dot.
Authors:
; ; ; ;  [1]
  1. Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052 (Australia)
Publication Date:
OSTI Identifier:
22486213
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACCURACY; CONTROL; QUANTUM DOTS; RESOLUTION; SCANNING TUNNELING MICROSCOPY; SILICON; TRANSISTORS