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Title: Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.
Authors:
;  [1] ; ;  [2] ; ;  [3] ;  [1] ;  [4]
  1. Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ (United Kingdom)
  2. Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
  3. National Physical Laboratory, Teddington TW11 0LW (United Kingdom)
  4. (United States)
Publication Date:
OSTI Identifier:
22486209
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DETECTION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; EXCITATION; INDIUM ANTIMONIDES; KHZ RANGE; MAGNETIC FIELDS; MICROSCOPY; NOISE; PROBES; SEMICONDUCTOR MATERIALS; SENSITIVITY; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS