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Title: Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors

Al{sub 0.4}Ga{sub 0.6}N/Al{sub 0.65}Ga{sub 0.35}N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10{sup 3} was obtained at 6 V bias.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [2] ;  [3]
  1. School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
  2. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22486208
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; ORGANOMETALLIC COMPOUNDS; PHOTOTRANSISTORS; SAPPHIRE; SUBSTRATES; SURFACTANTS