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Title: Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature

We have fabricated Fe{sub 3}O{sub 4}/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p{sup ++}) semiconducting nature of Fe{sub 3}O{sub 4}, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices.
Authors:
; ;  [1]
  1. Department of Physics, Indian Institute of Technology, Kharagpur 721 302 (India)
Publication Date:
OSTI Identifier:
22486196
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONNECTORS; DOPED MATERIALS; ELECTRIC CONTACTS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY BEAM DEPOSITION; FERRITES; HETEROJUNCTIONS; IRON OXIDES; LASER RADIATION; MAGNETITE; MAGNETORESISTANCE; PHOSPHORUS IONS; PULSED IRRADIATION; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K