skip to main content

Title: Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb

We investigate the crystal structure, transport, and magnetic properties of Fe-doped ferromagnetic semiconductor (Al{sub 1−x},Fe{sub x})Sb thin films up to x = 14% grown by molecular beam epitaxy. All the samples show p-type conduction at room temperature and insulating behavior at low temperature. The (Al{sub 1−x},Fe{sub x})Sb thin films with x ≤ 10% maintain the zinc blende crystal structure of the host material AlSb. The (Al{sub 1−x},Fe{sub x})Sb thin film with x = 10% shows intrinsic ferromagnetism with a Curie temperature (T{sub C}) of 40 K. In the (Al{sub 1−x},Fe{sub x})Sb thin film with x = 14%, a sudden drop of the hole mobility and T{sub C} was observed, which may be due to the microscopic phase separation. The observation of ferromagnetism in (Al,Fe)Sb paves the way to realize a spin-filtering tunnel barrier that is compatible with well-established III-V semiconductor devices.
Authors:
; ;  [1] ;  [2]
  1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)
  2. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)
Publication Date:
OSTI Identifier:
22486195
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; CURIE POINT; DOPED MATERIALS; FERROMAGNETISM; HOLE MOBILITY; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICES; THIN FILMS; ZINC SULFIDES