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Title: Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

Highly conducting (ρ = 3.9 × 10{sup −4} Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO){sub 1−x}(SiO{sub 2}){sub x} (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grain boundary and electron-phonon scattering in samples with different nominal silicon concentrations.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR (United Kingdom)
  2. Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom)
  3. Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE (United Kingdom)
Publication Date:
OSTI Identifier:
22486189
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BOROSILICATE GLASS; CARRIERS; CERAMICS; DOPED MATERIALS; ELECTRONS; ENERGY BEAM DEPOSITION; GRAIN BOUNDARIES; LASER RADIATION; POLYCRYSTALS; PULSED IRRADIATION; SILICON OXIDES; SOL-GEL PROCESS; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE MEASUREMENT; THIN FILMS; ZINC OXIDES