skip to main content

Title: High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.
Authors:
; ; ; ; ;  [1] ; ; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  2. (United States)
  3. Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)
Publication Date:
OSTI Identifier:
22486187
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BREAKDOWN; DISLOCATIONS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GALLIUM NITRIDES; LEAKAGE CURRENT; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PEAKS; PERFORMANCE; SUBSTRATES