Hopping conduction in p-type MoS{sub 2} near the critical regime of the metal-insulator transition
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
- Department of Electronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan (China)
- Department of Electronics Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)
- Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)
We report on temperature-dependent charge and magneto transport of chemically doped MoS{sub 2}, p-type molybdenum disulfide degenerately doped with niobium (MoS{sub 2}:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T{sup −0.25}, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS{sub 2}:Nb on the insulating side of the M-I transition.
- OSTI ID:
- 22486167
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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