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Title: In situ study of the endotaxial growth of hexagonal CoSi{sub 2} nanoplatelets in Si(001)

This investigation aims at studying–by in situ grazing-incidence small-angle x-ray scattering–the process of growth of hexagonal CoSi{sub 2} nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO{sub 2}/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi{sub 2} nanoplatelets, all of them with their main surfaces parallel to Si(111) crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi{sub 2} nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.
Authors:
;  [1] ; ; ;  [2] ;  [3]
  1. Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, Curitiba, Paraná 81531-990 (Brazil)
  2. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas (INIFTA, CONICET, Departamento de Química, Facultad de Ciencias Exactas, Universidad Nacional de La Plata), CC/16 suc. 4, 1900 La Plata (Argentina)
  3. Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo (Brazil)
Publication Date:
OSTI Identifier:
22486161
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; COBALT SILICIDES; DEPOSITS; DISSOLUTION; DISTRIBUTION; INTERFACES; NANOPARTICLES; NANOSTRUCTURES; SILICON OXIDES; SMALL ANGLE SCATTERING; THIN FILMS; X-RAY DIFFRACTION