skip to main content

SciTech ConnectSciTech Connect

Title: Optical absorption and intrinsic recombination in relaxed and strained InAs{sub 1–x}Sb{sub x} alloys for mid-wavelength infrared application

The intrinsic carrier recombination lifetime in relaxed and strained InAs{sub 1−x}Sb{sub x} alloys is investigated using the full-band Green's function theory. By computing the phonon-perturbed electron self-energy of the system, both direct and phonon-assisted indirect Auger and radiative processes are studied as functions of antimony molar fractions, lattice temperatures and applied in-plane biaxial strains. To improve the overall accuracy of the calculation, an empirical pseudopotential band structure for the alloy is also fitted to the measured band extrema and effective masses under different biaxial strains. A set of effective screened potentials valid for all the needed antimony fractions x and biaxial strains ϵ, therefore, is obtained and applied to the calculation. The results showed reduced total Auger recombination rates and enhanced radiative recombination rates in InAsSb alloys at room temperature when a compressive strain is applied. Furthermore, the study on the widely employed mid-wavelength infrared detector material, InAs{sub 0.91}Sb{sub 0.09}, strained by an InAs substrate, demonstrated that much longer minority carrier lifetime can be achieved compared to that in the lattice-matched situation when the lattice temperature is above 200 K.
Authors:
;  [1]
  1. ECE Department, Boston University, 8 Saint Mary's Street, 02215 Boston, Massachusetts (United States)
Publication Date:
OSTI Identifier:
22486156
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ACCURACY; ALLOYS; ANTIMONY; CARRIER LIFETIME; CARRIERS; INDIUM ARSENIDES; PHONONS; RECOMBINATION; SELF-ENERGY; STRAINS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K