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Title: Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼10{sup 20 }cm{sup −3} obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed.
Authors:
; ;  [1] ; ; ;  [2]
  1. Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands)
  2. Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22486155
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; ATOMS; CORRELATION FUNCTIONS; CRYSTAL STRUCTURE; DISTRIBUTION; DOPED MATERIALS; EPITAXY; INDIUM ANTIMONIDES; MANGANESE IONS; ORGANOMETALLIC COMPOUNDS; RANDOMNESS; RESOLUTION; SCANNING TUNNELING MICROSCOPY; VAPORS