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Title: Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors

This study investigates the effect of hafnium doping on the density of states (DOSs) in HfZnSnO thin film transistors fabricated by dual-target magnetron co-sputtering system. The DOSs is extracted by temperature-dependent field-effect measurements, and they decrease from 1.1 × 10{sup 17} to 4.6 × 10{sup 16 }eV/cm{sup 3} with increasing the hafnium concentrations. The behavior of DOSs for the increasing hafnium concentration HfZnSnO thin film transistors can be confirmed by both the reduction of ΔV{sub T} under bias stress and the trapping charges calculated by capacitance voltage measurements. It suggests that the reduction in DOSs due to the hafnium doping is closely related with the bias stability and thermal stability.
Authors:
; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China)
  2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22486137
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; DENSITY OF STATES; ELECTRIC POTENTIAL; EV RANGE; HAFNIUM; MAGNETRONS; SPUTTERING; STABILITY; TEMPERATURE DEPENDENCE; THIN FILMS; TRANSISTORS; TRAPPING