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Title: Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices

Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered structures is a rectangle, which includes four group-III atoms and four group-V atoms. A group-III atom and its three nearest-neighbor group-V atoms are placed on the same plane; however, these connections are not the sp{sup 2} hybridization. The bond angles around the group-V atoms are less than the bond angle of sp{sup 3} hybridization. The discovered structure of GaP is an indirect transition semiconductor, while the discovered structures of GaAs, InP, and InAs are direct transition semiconductors. Therefore, the discovered structures of these compounds have the potential of the materials for semiconductor devices, for example, water splitting photocatalysts. The discovered structures may become the most stable structures of monolayers which consist of other materials.
Authors:
 [1]
  1. Tokyo Metropolitan College of Industrial Technology, 8-17-1, Minami-Senju, Arakawa-ku, Tokyo 116-8523 (Japan)
Publication Date:
OSTI Identifier:
22486133
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; BOND ANGLE; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HYBRIDIZATION; INDIUM ARSENIDES; INDIUM PHOSPHIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; VANADIUM COMPOUNDS; WATER