skip to main content

Title: The effect of residual gas scattering on Ga ion beam patterning of graphene

The patterning of graphene by a 30 kV Ga{sup +} focused ion beam (FIB) is studied by in-situ and ex-situ Raman spectroscopy. It is found that the graphene surrounding the patterned target area can be damaged at remarkably large distances of more than 10 μm. We show that scattering of the Ga ions in the residual gas of the vacuum system is the main cause of the large range of lateral damage, as the size and shape of the tail of the ion beam were strongly dependent on the system background pressure. The range of the damage was therefore greatly reduced by working at low pressures and limiting the total amount of ions used. This makes FIB patterning a feasible alternative to electron beam lithography as long as residual gas scattering is taken into account.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)
  2. FEI Electron Optics, Achtseweg Noord 5, 5600 KA Eindhoven (Netherlands)
Publication Date:
OSTI Identifier:
22486129
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DAMAGE; DISTANCE; ELECTRON BEAMS; GALLIUM IONS; GRAPHENE; ION BEAMS; PRESSURE RANGE PA; RAMAN SPECTROSCOPY; SCATTERING; SHAPE; VACUUM SYSTEMS