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Title: A direct evidence of allocating yellow luminescence band in undoped GaN by two-wavelength excited photoluminescence

The behavior of below-gap luminescence of undoped GaN grown by MOCVD has been studied by the scheme of two-wavelength-excited photoluminescence. The emission intensity of shallow donor to valence band transition (I{sub OX}) increased while intensities of donor-acceptor pair transition and the Yellow Luminescence band (YLB) decreased after the irradiation of a below-gap excitation source of 1.17 eV. The conventional energy schemes and recombination models have been considered to explain our experimental result but only one model in which YLB is the transition of a shallow donor to a deep state placed at ∼1 eV above the valence band maximum satisfies our result. The defect related parameters that give a qualitative insight in the samples have been evaluated by systematically solving the rate equations and fitting the result with the experiment.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3]
  1. Department of Functional Materials Science, Saitama University, Saitama 338-8570 (Japan)
  2. (Bangladesh)
  3. Institute of Industrial Science, University of Tokyo, Tokyo 153-8505 (Japan)
Publication Date:
OSTI Identifier:
22486123
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; DEFECTS; EV RANGE; GALLIUM NITRIDES; IRRADIATION; PHOTOLUMINESCENCE; REACTION KINETICS; RECOMBINATION; VALENCE; WAVELENGTHS