Enhanced electrical activation in In-implanted Ge by C co-doping
- Department of Electronic Materials Engineering, Australian National University, Canberra ACT 0200 (Australia)
- Nuclear Science and Technology Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- KU Leuven, Instituut voor Kern-en Stralingsfysica, 3001 Leuven (Belgium)
- Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168 (Australia)
- Applied Physics, School Applied Sciences, RMIT University, Melbourne 3001 (Australia)
At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C + In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.
- OSTI ID:
- 22486122
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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