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Title: Real-time observation of dynamic process of oxygen vacancy migration in cerium oxides under electric field

The dynamic process of oxygen vacancy migration driven by the external electric field is directly observed at atomic scale in the cerium oxides (CeO{sub 2}) thin film by in-situ transmission electron microscopy method. When a bias voltage of a proper value is applied across the CeO{sub 2} film, the oxygen vacancies are formed near the interface of CeO{sub 2}/anode, followed by their migration along the direction of the external electric field. The structural modulation occurs in the [110] zone axis due to the ordering of oxygen vacancies. The migration of oxygen vacancies results in the reversible structural transformation, i.e., releasing and storing oxygen processes in CeO{sub 2}, which is of great significance for the ionic and electronic applications of the cerium oxides materials, such as oxygen pump, gas sensor, resistive random access memory, etc.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22486120
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANODES; CERIUM OXIDES; ELECTRIC FIELDS; ELECTRIC POTENTIAL; INTERFACES; OXYGEN; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES