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Title: Publisher's Note: “Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer” [Appl. Phys. Lett. 107, 102407 (2015)]

No abstract prepared.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [2]
  1. Center for Spintronics, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
  2. (Korea, Republic of)
  3. Department of Physics, Korea University, Seoul 136-713 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22486110
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; GALLIUM ARSENIDES; LAYERS; MAGNESIUM OXIDES; MODULATION; SPIN