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Title: A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

A model that describes bilayered bipolar resistive random access memory (BL-ReRAM) switching in oxide with a large band gap is presented. It is shown that, owing to the large energy barrier between the electrode and thin oxide layer, the electronic conduction is dominated by trap-assisted tunneling. The model is composed of an atomic oxygen vacancy migration model and an electronic tunneling conduction model. We also show experimentally observed three-resistance-level switching in Ru/ZrO{sub 2}/TaO{sub x} BL-ReRAM that can be explained by the two types of traps, i.e., shallow and deep traps in ZrO{sub 2}.
Authors:
 [1] ;  [2] ;  [3] ;  [1]
  1. Department of Applied Physics, Korea University, Sejong 2511, Sejong 339-700 (Korea, Republic of)
  2. (Korea, Republic of)
  3. Compound Device Laboratory, Samsung Advanced Institute of Technology, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-Do 446-712 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22486104
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPUTERIZED SIMULATION; ELECTRODES; LAYERS; MONTE CARLO METHOD; OXYGEN; RANDOMNESS; TRAPS; TUNNEL EFFECT; VACANCIES; ZIRCONIUM OXIDES