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Title: Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ∼10{sup 19 }cm{sup −3} carrier density, and ∼0.1 cm{sup 2} V{sup −1} s{sup −1} electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices.
Authors:
; ; ;  [1]
  1. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
Publication Date:
OSTI Identifier:
22486097
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CARRIER DENSITY; CRYSTALS; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; FIELD EFFECT TRANSISTORS; MATRICES; METALS; NANOSTRUCTURES; OXYGEN; PLASMA; POLYMERS; TRANSMISSION ELECTRON MICROSCOPY; WATER VAPOR; ZINC OXIDES