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Title: Border trap reduction in Al{sub 2}O{sub 3}/InGaAs gate stacks

The effect of Al{sub 2}O{sub 3} atomic layer deposition (ALD) temperature on the border trap density (N{sub bt}) of Al{sub 2}O{sub 3}/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces N{sub bt}. The reduction of N{sub bt} coincides with increased hydrogen incorporation in low temperature ALD-grown Al{sub 2}O{sub 3} films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In{sub 0.53}Ga{sub 0.47}As (100) surface to TMA immediately after thermal desorption of a protective As{sub 2} capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al{sub 2}O{sub 3}/InGaAs samples made at low ALD temperatures.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
  2. Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel)
  3. Department of Electrical Engineering, Stanford University, Stanford, California 9430 (United States)
  4. Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)
Publication Date:
OSTI Identifier:
22486090
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; ANNEALING; DENSITY; DESORPTION; DOSES; FILMS; GALLIUM ARSENIDES; HYDROGEN; INDIUM ARSENIDES; LAYERS; METALS; TRAPS; WATER VAPOR