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Title: Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.
Authors:
; ; ; ; ;  [1] ; ; ; ; ;  [2]
  1. Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany)
  2. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)
Publication Date:
OSTI Identifier:
22486073
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMPLIFIERS; CARRIERS; COLOR; CURRENTS; DENSITY OF STATES; GAIN; INDIUM ARSENIDES; QUANTUM DOTS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TRITIUM RECOVERY