skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quantum capacitance of graphene in contact with metal

Abstract

We report a versatile computation method to quantitatively determine the quantum capacitance of graphene when it is in contact with metal. Our results bridge the longstanding gap between the theoretically predicted and experimentally measured quantum capacitance of graphene. Contrary to popular assumptions, the presence of charged impurities or structural distortions of graphene are not the only sources of the asymmetric capacitance with respect to the polarity of the bias potential and the higher-than-expected capacitance at the Dirac point. They also originate from the field-induced electronic interactions between graphene and metal. We also provide an improved model representation of a metal–graphene junction.

Authors:
 [1];  [1];  [2]
  1. The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)
  2. Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto M5S 1A1 (Canada)
Publication Date:
OSTI Identifier:
22486070
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; CAPACITANCE; ELECTRIC CONTACTS; GRAPHENE; IMPURITIES; INTERACTIONS; METALS

Citation Formats

Chang, Jin Hyun, E-mail: jin.chang@mail.utoronto.ca, Dawson, Francis, Huzayyin, Ahmed, Electrical Power and Machines Department, Cairo University, Giza 12316, and Lian, Keryn. Quantum capacitance of graphene in contact with metal. United States: N. p., 2015. Web. doi:10.1063/1.4935365.
Chang, Jin Hyun, E-mail: jin.chang@mail.utoronto.ca, Dawson, Francis, Huzayyin, Ahmed, Electrical Power and Machines Department, Cairo University, Giza 12316, & Lian, Keryn. Quantum capacitance of graphene in contact with metal. United States. https://doi.org/10.1063/1.4935365
Chang, Jin Hyun, E-mail: jin.chang@mail.utoronto.ca, Dawson, Francis, Huzayyin, Ahmed, Electrical Power and Machines Department, Cairo University, Giza 12316, and Lian, Keryn. 2015. "Quantum capacitance of graphene in contact with metal". United States. https://doi.org/10.1063/1.4935365.
@article{osti_22486070,
title = {Quantum capacitance of graphene in contact with metal},
author = {Chang, Jin Hyun, E-mail: jin.chang@mail.utoronto.ca and Dawson, Francis and Huzayyin, Ahmed and Electrical Power and Machines Department, Cairo University, Giza 12316 and Lian, Keryn},
abstractNote = {We report a versatile computation method to quantitatively determine the quantum capacitance of graphene when it is in contact with metal. Our results bridge the longstanding gap between the theoretically predicted and experimentally measured quantum capacitance of graphene. Contrary to popular assumptions, the presence of charged impurities or structural distortions of graphene are not the only sources of the asymmetric capacitance with respect to the polarity of the bias potential and the higher-than-expected capacitance at the Dirac point. They also originate from the field-induced electronic interactions between graphene and metal. We also provide an improved model representation of a metal–graphene junction.},
doi = {10.1063/1.4935365},
url = {https://www.osti.gov/biblio/22486070}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 107,
place = {United States},
year = {Mon Nov 09 00:00:00 EST 2015},
month = {Mon Nov 09 00:00:00 EST 2015}
}