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Title: Quantum capacitance of graphene in contact with metal

We report a versatile computation method to quantitatively determine the quantum capacitance of graphene when it is in contact with metal. Our results bridge the longstanding gap between the theoretically predicted and experimentally measured quantum capacitance of graphene. Contrary to popular assumptions, the presence of charged impurities or structural distortions of graphene are not the only sources of the asymmetric capacitance with respect to the polarity of the bias potential and the higher-than-expected capacitance at the Dirac point. They also originate from the field-induced electronic interactions between graphene and metal. We also provide an improved model representation of a metal–graphene junction.
Authors:
;  [1] ;  [1] ;  [2] ;  [3]
  1. The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)
  2. (Egypt)
  3. Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto M5S 1A1 (Canada)
Publication Date:
OSTI Identifier:
22486070
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; CAPACITANCE; ELECTRIC CONTACTS; GRAPHENE; IMPURITIES; INTERACTIONS; METALS