skip to main content

SciTech ConnectSciTech Connect

Title: Sub-10 nm nanopantography

Nanopantography, a massively parallel nanopatterning method over large areas, was previously shown to be capable of printing 10 nm features in silicon, using an array of 1000 nm-diameter electrostatic lenses, fabricated on the substrate, to focus beamlets of a broad area ion beam on selected regions of the substrate. In the present study, using lens dimensional scaling optimized by computer simulation, and reduction in the ion beam image size and energy dispersion, the resolution of nanopantography was dramatically improved, allowing features as small as 3 nm to be etched into Si.
Authors:
; ;  [1] ;  [2]
  1. Plasma Processing Laboratory, Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)
  2. Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204 (United States)
Publication Date:
OSTI Identifier:
22486062
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPUTERIZED SIMULATION; ELECTROSTATIC LENSES; IMAGES; ION BEAMS; RESOLUTION; SILICON; SUBSTRATES