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Title: Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly contrasted SCM signals were obtained between the ZnO layers with different Ga densities. Through comparison with dopant depth profiles from secondary ion mass spectroscopy measurement, it is demonstrated that SCM is able to distinguish carrier concentrations at all levels of the samples (from 2 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3}). The good agreement of the results from the two techniques indicates that SCM can be a useful tool for two dimensional carrier profiling at nanoscale for ZnO nanostructure development. As an example, residual carrier concentration inside the non-intentionally doped buffer layer was estimated to be around 2 × 10{sup 16 }cm{sup −3} through calibration analysis.
Authors:
; ;  [1] ;  [2] ;  [3] ; ;  [4]
  1. Institut des Nanotechnologies de Lyon (INL), Université de Lyon, CNRS UMR 5270, INSA Lyon, 7 Avenue Jean Capelle, 69621 Villeurbanne (France)
  2. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS UPR10, rue Bernard Grégory, 06560 Valbonne Sophia Antipolis (France)
  3. (UNS), Parc Valrose, 06103 Nice (France)
  4. Groupe d'étude de la matière condensée (GEMaC), CNRS - Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats Unis, 78035 Versailles (France)
Publication Date:
OSTI Identifier:
22486046
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CALIBRATION; CAPACITANCE; CARRIERS; DOPED MATERIALS; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SIGNALS; ZINC OXIDES