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Title: Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm

This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of −18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ{sup (3)}/g{sub 0} of ∼4 × 10{sup −19} m{sup 3}/V{sup 3} are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ{sup (3)}/g{sub 0} compared to quantum dash lasers.
Authors:
;  [1] ; ;  [2] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany)
  2. Télécom Paristech, Université Paris-Saclay, 46 rue Barrault, CNRS LTCI 75634 Paris Cedex 13 (France)
  3. (United States)
  4. (Saudi Arabia)
Publication Date:
OSTI Identifier:
22486035
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; EFFICIENCY; FEEDBACK; FREQUENCY MIXING; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASERS; MODULATION; QUANTUM DOTS; SIGNAL-TO-NOISE RATIO; VAPOR PHASE EPITAXY