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Title: Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

In our earlier paper dealing with dispersion retrieval from ultra-deep, reactive-ion-etched, slow-wave circuits on silicon substrates, it was proposed that splitting high-aspect-ratio circuits into multilevels enabled precise characterization in sub-terahertz frequency regime. This achievement prompted us to investigate beam-wave interaction through a vacuum-sealed integration with a 15-kV, 85-mA, thermionic, electron gun. Our experimental study demonstrates sub-terahertz, backward-wave amplification driven by an external oscillator. The measured output shows a frequency downshift, as well as power amplification, from beam loading even with low beam perveance. This offers a promising opportunity for the development of terahertz radiation sources, based on silicon technologies.
Authors:
; ; ; ; ; ; ; ; ;  [1] ; ;  [2] ; ; ;  [3]
  1. Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of)
  2. Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of)
  3. Calabazas Creek Research, Inc., San Mateo, California 94404-1010 (United States)
Publication Date:
OSTI Identifier:
22486034
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMPLIFICATION; ASPECT RATIO; BEAM EMITTANCE; ELECTRON GUNS; IONS; OSCILLATORS; SILICON; SPACE CHARGE; SUBSTRATES