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Title: Erratum: “Voltage induced magnetostrictive switching of nanomagnets: Strain assisted spin transfer torque random access memory” [Appl. Phys. Lett. 104, 262407 (2014)]

No abstract prepared.
Authors:
; ; ; ;  [1]
  1. Components Research and Portland Technology Development, Intel Corp., Hillsboro, Oregon 97124 (United States)
Publication Date:
OSTI Identifier:
22486027
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; MAGNETOSTRICTION; RANDOMNESS; SPIN; STRAINS